The Role of High-κ TiHfO Gate Dielectric in Sputtered ZnO Thin-Film Transistors
نویسندگان
چکیده
منابع مشابه
Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator
Polyvinylpyrrolidone / Nickel oxide (PVP/NiO) dielectrics were fabricated with sol-gel method using 0.2 g of PVP at different working temperatures of 80, 150 and 200 ºC. Structural properties and surface morphology of the hybrid films were investigated by X- Ray diffraction (XRD) and Scanning Electron Microscope (SEM) respectively. Energy dispersive X-ray spec...
متن کاملProcess Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays
Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The p...
متن کاملThe impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors
Recently, the quality of the oxide-TFT gate insulator is given the utmost consideration strongly affecting device performance. In this study, preliminary experiments were carried out using a multi-component of lanthanum hafnium oxide (LHO) as a gate insulator. First, we investigated the electrical properties of LHO thin films deposited by ECR-ALD. Also, we report the fabrication and characteris...
متن کاملEffect of the Hydrophobicity of Hybrid Gate Dielectrics on a ZnO Thin Film Transistor
Amorphous silicon thin film transistors (a-Si TFTs) are widely used for consumer electronics and have been demonstrated to be useful for use in solar cells and flexible displays. Organic thin film transistors are of interest for applications in low-cost electronic devices such as radio-frequency identification tags, flexible displays, memory and sensors. However, the applications of these devic...
متن کاملHigh-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric.
A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin aluminum oxide layer forms naturally and spontaneously when the aluminum gate electrode is deposited by thermal evaporation onto the SAM-covered Zn...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010